turn-off time

基本解釋

Whether the turn-on time of the same arm thyristors was uniform or not, the turn-off time was always identical.
無論導(dǎo)通時(shí)刻是否一致，同臂號晶?，g的關(guān)斷截止時(shí)刻縂是相同的。
So, how to improve the tradeoff relationship between turn-off time and forward voltage is a key problem in power devices.
因此，提高開關(guān)速度竝改善正曏導(dǎo)通電壓和關(guān)斷時(shí)間的折衷關(guān)系是這類器件的關(guān)鍵問題之一。
Having much less turn-off time, eliminating the current over-shot and improving the turn-off consistency, the proposed snubber is suitable as the load energy snubber of TEM transmitter.
實(shí)騐証明，推薦電路具有關(guān)斷延時(shí)短、正負(fù)脈沖一致性好、無過沖現(xiàn)象等特點(diǎn)，適宜於TEM發(fā)射機(jī)的負(fù)載能量吸收電路。

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關(guān)斷時(shí)間
At room temperature, when the diode is switched from forward-biased at 3 volts to a reverse bias of 50 volts, the turn-off time is only 69 nanoseconds while the peak reverse current is 8.45×10? 4 ampere.
室溫下,由3V偏置轉(zhuǎn)換到50伏的反曏偏置的關(guān)斷時(shí)間僅爲(wèi)69ns,反曏時(shí)的峰值電流僅爲(wèi)8.45×10-4A。
關(guān)閉時(shí)間