junction depth

基本解釋

Test the junction depth and doping concentrations.
檢測擴散結深和摻雜濃度。
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Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通過理論分析得出硅雙結型色敏器件中摻雜濃度和兩個結的結深是影響光譜響應范圍的主要因素。
The series resistance (rs) of the PV cell may be due to the resistance of the metal contacts on the cell, ohmic losses in the front surface of the cell, impurity concentrations, or junction depth.
PV電池的串聯電阻（rs）與電池上的金屬觸點電阻、電池前表面的歐姆損耗、雜志濃度和結深有關。